Síntesis y caracterización de la heterounión de la interfaz In (O; OH) S / AgInS2
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Universidad Distrital Francisco José de Caldas. Colombia
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En este trabajo, presentamos algunos estudios complementarios para las películas delgadas In (O, OH) S depositadas en películas delgadas AgInS2 para fabricar un nuevo sistema de capa absorbente / capa buffer que se utilizará en tándem y / o en células solares de una unión. Como se demostró en trabajos previos llevados a cabo para nosotros, las capas de AgInS2 se cultivaron por co-evaporación a partir de precursores de metal en un proceso de dos pasos; y en (O, OH) S las películas delgadas se depositaron mediante deposición de baño químico. Las mediciones de difracción de rayos X indicaron que la película delgada de AgInS2 crecía con estructura de calcopirita; e In (O, OH) películas S crecidas con estructura policristalina. Las películas delgadas AgInS2 presentaron conductividad de tipo p, y desde las mediciones de tranductancia se encontró un alto coeficiente de absorción (mayor de 104 cm-1) y un intervalo de banda de energía de 1.95 eV ; y en (O, OH), las películas delgadas S presentaron Egabout 3.01 eV, el análisis morfológico indicó que bajo estas condiciones de síntesis, las películas delgadas en (O, OH) S recubrieron completamente la capa absorbente AgInS2. Finalmente, en este trabajo, se utilizó la ecuación de Avrami-Erofeev para estudiar la velocidad de crecimiento de la película fina In (O, OH) S sobre el sustrato AgInS2. Los resultados indican que el sistema desarrollado se puede usar en células solares de unión única y unión múltiple.
In this work,we presented some complementary studies for In(O,OH)S thin films deposited on AgInS2 thin films to fabricate a new system absorbent-layer/buffer-layer to be used in tandem and/or in one-junction solar cells. As showed in previous works carried out for us, AgInS2layers were grown by co-evaporation from metal precursors in a two-step process; and In(O,OH)S thin films were deposited by Chemical Bath deposition.X-ray diffraction measurements indicated that AgInS2 thin film grown with chalcopyrite structure; and In(O,OH)S films grown with polycrystalline structure.The AgInS2thin films presented p-type conductivity, andfrom tranductance measurements it was found a high absorption coefficient (greater than 104 cm−1) and an energy band gap of 1.95 eV; and In(O,OH),S thin films presented Egabout 3.01 eV;morphological analysis indicated that under this synthesis conditions,In(O,OH)S thin films coated completely the AgInS2absorber layer. Finally, in this work, the Avrami-Erofeev equation was used to study In(O,OH)S thin film growth rate on AgInS2 substrate. Results indicate that the developed system can be used in single-junction and multiple junction solar cells.
In this work,we presented some complementary studies for In(O,OH)S thin films deposited on AgInS2 thin films to fabricate a new system absorbent-layer/buffer-layer to be used in tandem and/or in one-junction solar cells. As showed in previous works carried out for us, AgInS2layers were grown by co-evaporation from metal precursors in a two-step process; and In(O,OH)S thin films were deposited by Chemical Bath deposition.X-ray diffraction measurements indicated that AgInS2 thin film grown with chalcopyrite structure; and In(O,OH)S films grown with polycrystalline structure.The AgInS2thin films presented p-type conductivity, andfrom tranductance measurements it was found a high absorption coefficient (greater than 104 cm−1) and an energy band gap of 1.95 eV; and In(O,OH),S thin films presented Egabout 3.01 eV;morphological analysis indicated that under this synthesis conditions,In(O,OH)S thin films coated completely the AgInS2absorber layer. Finally, in this work, the Avrami-Erofeev equation was used to study In(O,OH)S thin film growth rate on AgInS2 substrate. Results indicate that the developed system can be used in single-junction and multiple junction solar cells.
Palabras clave
Absorber layerthin film, AgInS2, buffer layer, In(O, OH)S, Optic window, solar cells.