Exploración de fases topológicas en heterobicapas semiconductoras de Van der Waals mediante la aplicación del formalismo de Floquet

Abstract

A theoretical study is presented on the engineering of topological bands in transition metal dichalcogenide heterostructures through the incidence of light, in the context of so-called Floquet engineering. It was found that the fundamental energy gap of the heterostructure can be overcome by applying near-infrared electromagnetic radiation, leading to overlap between Floquet energy bands, equivalent to an inversion of the gap between the conduction and valence bands. The resulting Floquet bands exhibit topological gaps, evidenced by their Chern numbers. The results of this study chart a new path for controlling the topology of electronic states, with potential fundamental and technological implications for devices based on two-dimensional semiconductors exhibiting moiré patterns.